Design Files
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The MMRF5017HS 125 W RF power GaN transistor is capable of broadband operation from 30 to 2200 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and broadband RF applications.
This part is characterized and performance is guaranteed for applications operating in the 30 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Part numbers include: MMRF5017HS.
Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
30-940 (1,2) | CW | 90 | 16.0 | 45.0 |
520 (1) | CW | 125 | 18.0 | 59.1 |
940 (1) | CW | 80 | 18.4 | 44.0 |
2200 | Pulse (100 µsec, 20% Duty Cycle) | 200 | 17.0 | 57.0 |
Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
520 (1) | Pulse (100 µsec, 20% Duty Cycle) |
> 10:1 at All Phase Angles | 3.4 (3 dB Overdrive) |
50 | No Device Degradation |
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Receive the full breakdown. See the product footprint and more in the eCad file.
Receive the full breakdown. See the product footprint and more in the eCad file.