MRF8P29300H|320 W Pulse, 2700-2900 MHz, 30

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The MRF8P29300HR6 and MRF8P29300HSR6 are RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications.

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Data Sheet

Product Details

Features

Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V_DD Operation
Integrated ESD Protection
Designed for Push-Pull Operation
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

Part numbers include: MRF8P29300H.

RF Performance Table

Typical Pulse Performance

V_DD = 30 Volts, I_DQ = 100 mA

Signal Type	Pout (W)	f (MHz)	G_ps (dB)	η_D (%)	IRL (dB)
Pulse (100 µsec, 10% Duty Cycle)	320 Peak	2900	13.3	50.5	–17

Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak Power, 300 µsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

3 documents

^{Data Sheet}
ARCHIVED - MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs

PDFRev 0Feb 24, 20111.1 MBMRF8P29300HEnglish
^{Package Information}
98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

PDFRev HOct 25, 2019159.0 KBSOT1787-1English
^{Package Information}
98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins

PDFRev HFeb 23, 201644.6 KBSOT1829-1English

Design Resources

Design Files

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1-5 of 6 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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MRF8P29300H, MRF8P29300HS RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Mar 2, 2012 00:00:00297.2 KBMRF8P29300H_MDL_AWR
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MRF8P29300H, MRF8P29300HS RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:00237.8 KBMRF8P29300H_MDL_ADS
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^Models
MRF8P29300HR6, MRF8P29300HSR6 S-Parameters

S2PRev 0Feb 24, 2011 00:00:0034.4 KBMRF8P29300H_SP
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^Calculators
MRF8P29300HR6, MRF8P29300HSR6 RF Power Electromigration MTTF Calculation Program

XLSXRev 0Feb 24, 2011 00:00:0034.7 KBMRF8P29300H_MTTF_CALC
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2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs

Product Details

Features

RF Performance Table

Typical Pulse Performance

Buy/Parametrics

Documentation

Filter by

ARCHIVED - MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs

98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF8P29300H, MRF8P29300HS RF High-Power Model AWR Product Model Design Kit

MRF8P29300H, MRF8P29300HS RF High-Power Model ADS Product Model Design Kit

MRF8P29300HR6, MRF8P29300HSR6 S-Parameters

MRF8P29300HR6, MRF8P29300HSR6 RF Power Electromigration MTTF Calculation Program

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