2620-2690 MHz, 28 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

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MRF8S26120H

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The MRF8S26120HR3 and MRF8S26120HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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^{Data Sheet}
ARCHIVED - MRF8S26120HR3, MRF8S26120HSR3 2620-2690 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

PDFRev 0Jun 23, 2010950.6 KBMRF8S26120HEnglish

2620-2690 MHz, 28 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

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ARCHIVED - MRF8S26120HR3, MRF8S26120HSR3 2620-2690 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

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