- No Longer Manufactured
- MRF8P26080H
2500-2700 MHz, 14 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8P26080HR3 and MRF8P26080HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Table
2570-2620 MHz
Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2570 MHz | 15.4 | 39.1 | 6.8 | –33.6 |
| 2595 MHz | 15.2 | 38.2 | 6.8 | –36.0 |
| 2620 MHz | 15.0 | 36.9 | 6.8 | –40.0 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 3 dB Compression Point ≃ 83 Watts CW
Documentation
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