MRF8P26080H|2500-2700 MHz, 14 W Avg, 28 V | NXP Semiconductors

2500-2700 MHz, 14 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors

  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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RF Performance Table

2570-2620 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2570 MHz15.439.16.8–33.6
2595 MHz15.238.26.8–36.0
2620 MHz15.036.96.8–40.0
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 83 Watts CW
N true 0 PSPMRF8P26080Hen 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English Designed for W-CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. 1293048298204719705428 PSP 576.9 KB None None documents None 1293048298204719705428 /docs/en/data-sheet/MRF8P26080H.pdf 576931 /docs/en/data-sheet/MRF8P26080H.pdf MRF8P26080H documents N N 2016-10-31 ARCHIVED - MRF8P26080HR3, MRF8P26080HSR3 2500-2700 MHz, 14 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF8P26080H.pdf /docs/en/data-sheet/MRF8P26080H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Dec 22, 2010 980000996212993340 Data Sheet Y N ARCHIVED - MRF8P26080HR3, MRF8P26080HSR3 2500-2700 MHz, 14 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs false 0 MRF8P26080H downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/MRF8P26080H.pdf 2016-10-31 1293048298204719705428 PSP 1 Dec 22, 2010 Data Sheet Designed for W-CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. None /docs/en/data-sheet/MRF8P26080H.pdf English documents 576931 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF8P26080H.pdf ARCHIVED - MRF8P26080HR3, MRF8P26080HSR3 2500-2700 MHz, 14 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF8P26080H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - MRF8P26080HR3, MRF8P26080HSR3 2500-2700 MHz, 14 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 576.9 KB MRF8P26080H N 1293048298204719705428 true Y Products

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