AFT26H160-4S4|2496-2690 MHz, 32 W Avg, 28 V | NXP Semiconductors

2496-2690 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS Transistor

  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

Roll over image to zoom in

Product Details

Select a section:

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQA = 500 mA, VGSB = 0.6 Vdc, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
N true 0 PSPAFT26H160-4S4en 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English The AFT26H160-4S4R3 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. 1373675749228728541805 PSP 474.3 KB None None documents None 1373675749228728541805 /docs/en/data-sheet/AFT26H160-4S4.pdf 474299 /docs/en/data-sheet/AFT26H160-4S4.pdf AFT26H160-4S4 documents N N 2016-10-31 ARCHIVED - AFT26H160-4S4R3 2496-2690 MHz, 32 W AVG., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor – Data Sheet /docs/en/data-sheet/AFT26H160-4S4.pdf /docs/en/data-sheet/AFT26H160-4S4.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Nov 25, 2013 980000996212993340 Data Sheet Y N ARCHIVED - AFT26H160-4S4R3 2496-2690 MHz, 32 W AVG., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor – Data Sheet false 0 AFT26H160-4S4 downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/AFT26H160-4S4.pdf 2016-10-31 1373675749228728541805 PSP 1 Nov 25, 2013 Data Sheet The AFT26H160-4S4R3 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. None /docs/en/data-sheet/AFT26H160-4S4.pdf English documents 474299 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT26H160-4S4.pdf ARCHIVED - AFT26H160-4S4R3 2496-2690 MHz, 32 W AVG., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor – Data Sheet /docs/en/data-sheet/AFT26H160-4S4.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N ARCHIVED - AFT26H160-4S4R3 2496-2690 MHz, 32 W AVG., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor – Data Sheet 474.3 KB AFT26H160-4S4 N 1373675749228728541805 true Y Products

Documentation

Quick reference to our documentation types.

1 document

Support

What do you need help with?

Recently viewed products

View or edit your browsing history