A2T26H160-24S|2496-2690 MHz, 28 W Avg., 28 V | NXP Semiconductors

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2496-2690 MHz, 28 W Avg., 28 V Airfast® RF Power LDMOS Transistor

A2T26H160-24S
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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The A2T26H160-24SR3 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.

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RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization: VDD = 28 Vdc, IDQA = 350 mA, VGSB = 0.6 Vdc, Pout = 28 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2496 MHz15.748.27.9–31.5
2590 MHz16.347.97.9–34.0
2690 MHz16.448.17.5–34.0
N true 0 PSPA2T26H160-24Sen 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English The A2T26H160-24SR3 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. 1408658180612704059478 PSP 613.5 KB None None documents None 1408658180612704059478 /docs/en/data-sheet/A2T26H160-24S.pdf 613506 /docs/en/data-sheet/A2T26H160-24S.pdf A2T26H160-24S documents N N 2016-10-31 ARCHIVED - A2T26H160-24SR3 2496-2690 MHz, 28 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/A2T26H160-24S.pdf /docs/en/data-sheet/A2T26H160-24S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Aug 21, 2014 980000996212993340 Data Sheet Y N ARCHIVED - A2T26H160-24SR3 2496-2690 MHz, 28 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor - Data Sheet false 0 A2T26H160-24S downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/A2T26H160-24S.pdf 2016-10-31 1408658180612704059478 PSP 1 Aug 21, 2014 Data Sheet The A2T26H160-24SR3 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. None /docs/en/data-sheet/A2T26H160-24S.pdf English documents 613506 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T26H160-24S.pdf ARCHIVED - A2T26H160-24SR3 2496-2690 MHz, 28 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/A2T26H160-24S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - A2T26H160-24SR3 2496-2690 MHz, 28 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor - Data Sheet 613.5 KB A2T26H160-24S N 1408658180612704059478 true Y Products

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