2496-2690 MHz, 26 dBm Avg., 48 V Airfast® RF Power LDMOS Transistor

A3V26S004N Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

Roll over image to zoom in

This A3V26S004N 26 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.

Product Details

Select a section:

RF Performance Table

2600 MHz

Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 42 Vdc, IDQ = 17 mA, Pout = 23.5 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2515 MHz23.215.110.3-35.0
2595 MHz23.015.59.6-37.0
2675 MHz22.014.89.3-37.7
1. All data measured in reference circuit with device soldered to printed circuit board.

Documentation

Quick reference to our documentation types.

Filters

1 documents

Support

What do you need help with?

  • Narrow your search
Search