AFT23S160W02S|2300-2400 MHz, 45 W Avg, 28 V | NXP Semiconductors

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2300-2400 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistors

AFT23S160W02S
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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The AFT23S160W02SR3 and AFT23S160W02GSR3 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.

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RF Performance Table

2300 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
2300 MHz17.731.06.8–34.6–18
2350 MHz17.830.56.7–34.5–25
2400 MHz17.930.36.6–33.9–14
N true 0 PSPAFT23S160W02Sen 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English The AFT23S160W02S and AFT23S160W02GS 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. 1383001275805727566140 PSP 281.0 KB None None documents None 1383001275805727566140 /docs/en/data-sheet/AFT23S160W02S.pdf 281024 /docs/en/data-sheet/AFT23S160W02S.pdf AFT23S160W02S documents N N 2016-10-31 ARCHIVED - AFT23S160W02SR3, AFT23S160W02GSR3 2300-2400 MHz, 45 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/AFT23S160W02S.pdf /docs/en/data-sheet/AFT23S160W02S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Nov 6, 2013 980000996212993340 Data Sheet Y N ARCHIVED - AFT23S160W02SR3, AFT23S160W02GSR3 2300-2400 MHz, 45 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet false 0 AFT23S160W02S downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/AFT23S160W02S.pdf 2016-10-31 1383001275805727566140 PSP 1 Nov 6, 2013 Data Sheet The AFT23S160W02S and AFT23S160W02GS 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. None /docs/en/data-sheet/AFT23S160W02S.pdf English documents 281024 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT23S160W02S.pdf ARCHIVED - AFT23S160W02SR3, AFT23S160W02GSR3 2300-2400 MHz, 45 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/AFT23S160W02S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - AFT23S160W02SR3, AFT23S160W02GSR3 2300-2400 MHz, 45 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet 281.0 KB AFT23S160W02S N 1383001275805727566140 true Y Products

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