2300-2400 MHz, 28 W Avg., 28 V LTE Lateral N-Channel RF Power MOSFETs

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MRF8S23120H

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The MRF8S23120HR3 and MRF8S23120HSR3 are designed for LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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Data Sheet
ARCHIVED - MRF8S23120HR3, MRF8S23120HSR3 2300-2400 MHz, 28 W Avg., 28 V LTE Lateral N-Channel RF Power MOSFETs

PDFRev 0Nov 18, 2010454.9 KBMRF8S23120HEnglish

2300-2400 MHz, 28 W Avg., 28 V LTE Lateral N-Channel RF Power MOSFETs

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ARCHIVED - MRF8S23120HR3, MRF8S23120HSR3 2300-2400 MHz, 28 W Avg., 28 V LTE Lateral N-Channel RF Power MOSFETs

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