- No Longer Manufactured
- MRF8P23080H
2300-2400 MHz, 16 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8P23080HR3 and MRF8P23080HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Table
2300-2400 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 280 mA, VGSB = 0.7 Vdc, Pout = 16 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2300 MHz | 14.6 | 42.0 | 6.7 | –29.5 |
| 2350 MHz | 14.7 | 41.6 | 6.8 | –31.5 |
| 2400 MHz | 14.6 | 41.4 | 6.6 | –32.5 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 2350 MHz, 90 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 3 dB Compression Point ≃ 100 Watts CW
Documentation
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