AFT21S220W02S|2110-2170 MHz, 50 W Avg, 28 V | NXP Semiconductors

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2110-2170 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistors

AFT21S220W02S
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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The AFT21S220W02SR3 and AFT21S220W02GSR3 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 MHz.

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RF Performance Table

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
2110 MHz18.929.87.2–34.0–18
2140 MHz19.129.37.1–34.0–25
2170 MHz19.228.97.0–34.0–17
N true 0 PSPAFT21S220W02Sen 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English The AFT21S220W02S and AFT21S220W02GS 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 MHz. 1393271462879700150994 PSP 494.6 KB None None documents None 1393271462879700150994 /docs/en/data-sheet/AFT21S220W02S.pdf 494576 /docs/en/data-sheet/AFT21S220W02S.pdf AFT21S220W02S documents N N 2016-10-31 ARCHIVED - AFT21S220W02SR3, AFT21S220W02GSR3 2110-2170 MHz, 50 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/AFT21S220W02S.pdf /docs/en/data-sheet/AFT21S220W02S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Feb 24, 2014 980000996212993340 Data Sheet Y N ARCHIVED - AFT21S220W02SR3, AFT21S220W02GSR3 2110-2170 MHz, 50 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet false 0 AFT21S220W02S downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/AFT21S220W02S.pdf 2016-10-31 1393271462879700150994 PSP 1 Feb 24, 2014 Data Sheet The AFT21S220W02S and AFT21S220W02GS 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 MHz. None /docs/en/data-sheet/AFT21S220W02S.pdf English documents 494576 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT21S220W02S.pdf ARCHIVED - AFT21S220W02SR3, AFT21S220W02GSR3 2110-2170 MHz, 50 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/AFT21S220W02S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - AFT21S220W02SR3, AFT21S220W02GSR3 2110-2170 MHz, 50 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet 494.6 KB AFT21S220W02S N 1393271462879700150994 true Y Products

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