2110-2170 MHz, 34 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

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MRF8S21140H

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The MRF8S21140HR3 and MRF8S21140HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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^{Data Sheet}
ARCHIVED - MRF8S21140H, MRF8S21140HS 2110-2170 MHz, 34 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

PDFRev 0May 17, 2010220.1 KBMRF8S21140HEnglish

2110-2170 MHz, 34 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

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ARCHIVED - MRF8S21140H, MRF8S21140HS 2110-2170 MHz, 34 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

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