AFT21S140W02S|2110-2170 MHz, 32 W Avg, 28 V | NXP Semiconductors

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2110-2170 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS Transistors

AFT21S140W02S
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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The AFT21S140W02SR3 and AFT21S140W02GSR3 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 MHz.

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RF Performance Tables

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
2110 MHz19.033.96.7–32.4–15
2140 MHz19.333.56.7–32.6–24
2170 MHz19.433.26.7–32.7–22
N true 0 PSPAFT21S140W02Sen 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English The AFT21S140W02S and AFT21S140W02GS 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 MHz. 1393270692076735337359 PSP 498.7 KB None None documents None 1393270692076735337359 /docs/en/data-sheet/AFT21S140W02S.pdf 498733 /docs/en/data-sheet/AFT21S140W02S.pdf AFT21S140W02S documents N N 2016-10-31 ARCHIVED - AFT21S140W02SR3, AFT21S140W02GSR3 2110-2170 MHz, 32 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/AFT21S140W02S.pdf /docs/en/data-sheet/AFT21S140W02S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Feb 24, 2014 980000996212993340 Data Sheet Y N ARCHIVED - AFT21S140W02SR3, AFT21S140W02GSR3 2110-2170 MHz, 32 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet false 0 AFT21S140W02S downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/AFT21S140W02S.pdf 2016-10-31 1393270692076735337359 PSP 1 Feb 24, 2014 Data Sheet The AFT21S140W02S and AFT21S140W02GS 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 MHz. None /docs/en/data-sheet/AFT21S140W02S.pdf English documents 498733 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT21S140W02S.pdf ARCHIVED - AFT21S140W02SR3, AFT21S140W02GSR3 2110-2170 MHz, 32 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/AFT21S140W02S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - AFT21S140W02SR3, AFT21S140W02GSR3 2110-2170 MHz, 32 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet 498.7 KB AFT21S140W02S N 1393270692076735337359 true Y Products

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