- No Longer Manufactured
- MRF8S21120H
2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8S21120HR3 and MRF8S21120HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Table
2000 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2110 MHz | 17.4 | 34.6 | 6.4 | –37.5 |
| 2140 MHz | 17.5 | 34.1 | 6.5 | –38.0 |
| 2170 MHz | 17.6 | 34.0 | 6.4 | –37.6 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 160 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 1 dB Compression Point ≃ 107 Watts CW
Documentation
Quick reference to our documentation types.