- No Longer Manufactured
- MRF8HP21130H
2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8HP21130HR3 and MRF8HP21130HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Table
2000 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2110 MHz | 14.2 | 46.4 | 7.9 | –35.4 |
| 2140 MHz | 14.1 | 45.7 | 7.7 | –35.3 |
| 2170 MHz | 14.0 | 45.1 | 7.6 | –34.8 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 157 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 3 dB Compression Point ≃ 166 Watts CW
Documentation
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