Design Files
Quick reference to our
design files types.
1 design file
-
Calculators
MRF7P20040HR3, MRF7P20040HSR3 RF Power Electromigration MTTF Calculation Program
- No Longer Manufactured
- MRF7P20040H
2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF7P20040HR3 and MRF7P20040HSR3 are designed for CDMA base station applications with frequencies from 1800 to 2200 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Table
2025 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 32 Volts, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2025 MHz | 18.2 | 42.6 | 7.3 | –34.8 |
- Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 3 dB Compression Point ≃ 50 Watts CW
1 documents
Data Sheet (1)
Design Resources
Support
Recently viewed products
MRF8S18260H
1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
buy optionsMMRF2004NB
2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifier
buy optionsMRF8P20160H
1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
buy options