1930-1990 MHz, 34 W Avg., 28 V Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

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MRF8S19140H

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The MRF8S19140HR3 and MRF8S19140HSR3 are designed for CDMA, W-CDMA and LTE base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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^{Data Sheet}
ARCHIVED - MRF8S19140HR3, MRF8S19140HSR3 1930-1990 MHz, 34 W Avg., 28 V CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

PDFRev 0May 6, 2010412.6 KBMRF8S19140HEnglish

1930-1990 MHz, 34 W Avg., 28 V Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

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ARCHIVED - MRF8S19140HR3, MRF8S19140HSR3 1930-1990 MHz, 34 W Avg., 28 V CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

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