1930-1990 MHz, 29 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

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The MRF7S19100NR1 and MRF7S19100NBR1 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

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^{Data Sheet}
ARCHIVED - MRF7S19100NR1 MRF7S19100NBR1 1930-1990 MHz, 29 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

PDFRev 3Dec 30, 2008606.8 KBMRF7S19100NEnglish

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^Calculators
MRF7S19100NBR1, MRF7S19100NR1 RF Power Electromigration MTTF Calculation Program

XLSRev 2Aug 1, 2007 00:00:0044.0 KBMRF7S19100N_MTTF_CALC
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1930-1990 MHz, 29 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

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ARCHIVED - MRF7S19100NR1 MRF7S19100NBR1 1930-1990 MHz, 29 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

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MRF7S19100NBR1, MRF7S19100NR1 RF Power Electromigration MTTF Calculation Program

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