1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

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MRF6S19100N

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The MRF6S19100NR1 and MRF6S19100NBR1 are designed for N–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

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Data Sheet
ARCHIVED - MRF6S19100NR1, MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

PDFRev 3Dec 27, 2010951.1 KBMRF6S19100NEnglish

1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

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ARCHIVED - MRF6S19100NR1, MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

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