- No Longer Manufactured
- MRF8P20160H
1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8P20160HR3 and MRF8P20160HSR3 are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Tables
1880-1920 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1880 MHz | 16.5 | 44.8 | 7.0 | –29.8 |
| 1900 MHz | 16.6 | 45.3 | 6.9 | –30.1 |
| 1920 MHz | 16.5 | 45.8 | 6.9 | –30.6 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 3 dB Compression Point ≃ 160 Watts CW
2025 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2025 MHz | 15.3 | 44.0 | 6.8 | –30.0 |
Documentation
Quick reference to our documentation types.