MRF8P20140WH|1880-2025 MHz, 24 W Avg, 28 V | NXP Semiconductors

1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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RF Performance Table

2025 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 170 Watts
N true 0 PSPMRF8P20140WHen 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English The MRF8P20140WH, MRF8P20140WHS and MRF8P20140WGHS are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. 1304031024947715785453 PSP 471.5 KB None None documents None 1304031024947715785453 /docs/en/data-sheet/MRF8P20140WH.pdf 471470 /docs/en/data-sheet/MRF8P20140WH.pdf MRF8P20140WH documents N N 2016-10-31 ARCHIVED - MRF8P20140WHR3, MRF8P20140WHSR3, MRF8P20140WGHSR3 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet /docs/en/data-sheet/MRF8P20140WH.pdf /docs/en/data-sheet/MRF8P20140WH.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Nov 15, 2013 980000996212993340 Data Sheet Y N ARCHIVED - MRF8P20140WHR3, MRF8P20140WHSR3, MRF8P20140WGHSR3 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet false 0 MRF8P20140WH downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/MRF8P20140WH.pdf 2016-10-31 1304031024947715785453 PSP 1 Nov 15, 2013 Data Sheet The MRF8P20140WH, MRF8P20140WHS and MRF8P20140WGHS are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. None /docs/en/data-sheet/MRF8P20140WH.pdf English documents 471470 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF8P20140WH.pdf ARCHIVED - MRF8P20140WHR3, MRF8P20140WHSR3, MRF8P20140WGHSR3 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet /docs/en/data-sheet/MRF8P20140WH.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N ARCHIVED - MRF8P20140WHR3, MRF8P20140WHSR3, MRF8P20140WGHSR3 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet 471.5 KB MRF8P20140WH N 1304031024947715785453 true Y Products

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