- No Longer Manufactured
- MRF8S18210WHS
1805-1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8S18210WHSR3 and MRF8S18210WGHSR3 are designed for CDMA base station applications with frequencies from 1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Tables
1900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQ = 1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1930 MHz | 17.8 | 29.2 | 7.0 | –34.2 |
| 1960 MHz | 17.8 | 28.2 | 7.0 | –34.4 |
| 1995 MHz | 18.1 | 27.6 | 7.1 | –34.3 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 1 dB Compression Point ≃ 210 Watts CW
1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQ = 1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1805 MHz | 18.2 | 30.1 | 7.3 | –35.1 |
| 1840 MHz | 18.1 | 29.1 | 7.4 | –35.4 |
| 1880 MHz | 18.2 | 27.8 | 7.4 | –35.9 |
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