- No Longer Manufactured
- A2T18S165-12S
1805-1995 MHz, 38 W Avg., 28 V Airfast® RF Power LDMOS Transistor
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The A2T18S165-12SR3 38 W RF power LDMOS transistor is designed for cellular base
station applications covering the frequency range of 1805 to 1995 MHz.
Product Details
RF Performance Tables
1800 MHz
Typical single-carrier W-CDMA performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 18.1 | 34.6 | 6.9 | –34.9 | –16 |
| 1840 MHz | 18.0 | 34.3 | 6.8 | –34.2 | –17 |
| 1880 MHz | 18.3 | 34.9 | 6.9 | –34.5 | –12 |
1900 MHz
Typical single-carrier W-CDMA performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1930 MHz | 18.1 | 32.3 | 6.9 | –34.4 | –16 |
| 1960 MHz | 18.6 | 32.9 | 7.0 | –34.4 | –18 |
| 1995 MHz | 18.7 | 34.1 | 6.9 | –34.2 | –12 |