- No Longer Manufactured
- A2T18S160W31S
1805-1995 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS Transistors
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The A2T18S160W31SR3 and A2T18S160W31GSR3 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz.
Product Details
RF Performance Tables
1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1000 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 19.6 | 32.1 | 7.2 | –34.7 | –12 |
| 1840 MHz | 20.1 | 32.1 | 7.2 | –35.0 | –17 |
| 1880 MHz | 19.9 | 31.6 | 7.2 | –35.4 | –12 |
1900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1000 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1930 MHz | 21.0 | 32.2 | 7.5 | –34.4 | –17 |
| 1960 MHz | 21.3 | 32.2 | 7.4 | –34.4 | –19 |
| 1995 MHz | 21.6 | 32.9 | 7.1 | –33.9 | –12 |
Documentation
Quick reference to our documentation types.