A2T18H455W23N|1805-1880 MHz, 87 W Avg, 31.5 V | NXP Semiconductors

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1805-1880 MHz, 87 W Avg., 31.5 V Airfast® RF Power LDMOS Transistor

A2T18H455W23N
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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The A2T18H455W23NR6 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

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RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 31.5 Vdc, IDQA = 1080 mA, VGSB = 0.25 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1805 MHz14.548.18.1–32.7
1840 MHz15.248.28.1–33.0
1880 MHz15.948.48.0–33.8
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