- No Longer Manufactured
- MRF8S18260H
1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8S18260HR6 and MRF8S18260HSR6 are designed for CDMA and multi-carrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Table
1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQ = 1600 mA, Pout = 74 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1805 MHz | 17.9 | 31.6 | 6.0 | –35.0 |
| 1840 MHz | 17.9 | 31.9 | 6.0 | –36.0 |
| 1880 MHz | 17.9 | 32.5 | 5.9 | –36.0 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 374 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW
1 documents
Data Sheet (1)
Support
Recently viewed products
MRF8P20160H
1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
buy optionsMRF7S19100N
1930-1990 MHz, 29 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
buy optionsMRF7S21150H
2110-2170 MHz, 44 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
buy options