- No Longer Manufactured
- MRF8S18120H
1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8S18120HR3 and MRF8S18120HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Tables
1800 MHz
Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW| Frequency | Gps (dB) |
ηD (%) |
| 1805 MHz | 18.2 | 49.8 |
| 1840 MHz | 18.6 | 51.4 |
| 1880 MHz | 18.7 | 53.9 |
- Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW
1800 MHz
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 46 Watts Avg.| Frequency | Gps (dB) |
ηD (%) |
SR1 @ 400 kHz (dBc) |
SR2 @ 600 kHz (dBc) |
EVM (% rms) |
| 1805 MHz | 17.9 | 41.0 | –64 | –76 | 1.6 |
| 1840 MHz | 18.2 | 41.9 | –63 | –76 | 1.7 |
| 1880 MHz | 18.3 | 43.2 | –61 | –76 | 2.0 |
Documentation
Quick reference to our documentation types.