- No Longer Manufactured
- A2T18S261W12N
1805-1880 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The A2T18S261W12NR3 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.
Product Details
RF Performance Table
1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 17.7 | 34.2 | 7.0 | –35.1 | –15 |
| 1840 MHz | 18.1 | 34.1 | 7.1 | –35.2 | –13 |
| 1880 MHz | 18.2 | 34.8 | 7.1 | –34.6 | –10 |