A2T18S162W31S|Airfast 1805-1880 MHz, 32 W | NXP Semiconductors

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1805-1880 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS

A2T18S162W31S
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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The A2T18S162W31SR3 and A2T18S162W31GSR3 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

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RF Performance Table

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1000 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
1805 MHz19.233.07.1–34.8–10
1840 MHz20.133.97.0–34.6–16
1880 MHz19.634.26.8–34.3–8
N true 0 PSPA2T18S162W31Sen 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A2T18S162W31 32 W RF power LDMOS transistors for cellular base station applications requiring very wide instantaneous bandwidth in the 1805-1880 MHz bands 1432937840290703582796 PSP 474.5 KB None None documents None 1432937840290703582796 /docs/en/data-sheet/A2T18S162W31S.pdf 474527 /docs/en/data-sheet/A2T18S162W31S.pdf A2T18S162W31S documents N N 2016-10-31 ARCHIVED - A2T18S162W31S, A2T18S162W31GS 1805-1880 MHz, 32 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors Data Sheet /docs/en/data-sheet/A2T18S162W31S.pdf /docs/en/data-sheet/A2T18S162W31S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 29, 2015 980000996212993340 Data Sheet Y N ARCHIVED - A2T18S162W31S, A2T18S162W31GS 1805-1880 MHz, 32 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors Data Sheet false 0 A2T18S162W31S downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/A2T18S162W31S.pdf 2016-10-31 1432937840290703582796 PSP 1 May 29, 2015 Data Sheet A2T18S162W31 32 W RF power LDMOS transistors for cellular base station applications requiring very wide instantaneous bandwidth in the 1805-1880 MHz bands None /docs/en/data-sheet/A2T18S162W31S.pdf English documents 474527 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T18S162W31S.pdf ARCHIVED - A2T18S162W31S, A2T18S162W31GS 1805-1880 MHz, 32 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors Data Sheet /docs/en/data-sheet/A2T18S162W31S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - A2T18S162W31S, A2T18S162W31GS 1805-1880 MHz, 32 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors Data Sheet 474.5 KB A2T18S162W31S N 1432937840290703582796 true Y Products

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