MRF6S18060N|1800-2000 MHz, 60 W, 26 V

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MRF6S18060N

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The MRF6S18060NR1 and MRF6S18060NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

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Data Sheet
ARCHIVED - MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

PDFRev 4Dec 5, 2008781.3 KBMRF6S18060NEnglish

1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

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ARCHIVED - MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

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