MRF6S18060N|1800-2000 MHz, 60 W, 26 V

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

Products
No Longer Manufactured
MRF6S18060N

Roll over image to zoom in

The MRF6S18060NR1 and MRF6S18060NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

Data Sheet

Documentation

Quick reference to our documentation types.

1 documents

^{Data Sheet}
ARCHIVED - MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

PDFRev 4Dec 5, 2008781.3 KBMRF6S18060NEnglish

1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Documentation

Filter by

ARCHIVED - MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Support

What do you need help with?

Suggested Links