MRF6S20010N|1600-2200 MHz, 10 W, 28 V

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MRF6S20010N

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The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.

Data Sheet

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Data Sheet
ARCHIVED - MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

PDFRev 4Jan 24, 2014895.7 KBMRF6S20010NEnglish

1600-2200 MHz, 10 W, 28 V, GSM/EDGE, N-CDMA, W-CDMA RF Power LDMOS Transistors

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ARCHIVED - MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

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