MRF6V2300N|300 W CW, 10-600 MHz, 50 V

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MRF6V2300N

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The MRF6V2300NR1 and MRF6V2300NBR1 are designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

Data Sheet

Documentation

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2 documents

Data Sheet
ARCHIVED - MRF6V2300NR1, MRF6V2300NBR1, 10-600 MHz, 300 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs

PDFRev 5Apr 28, 20101.2 MBMRF6V2300NEnglish
Brochure
Industrial, Scientific and Medical Solutions Brochure

PDFRev 9Oct 3, 20141.3 MBBR1593English

10-600 MHz, 300 W, 50 V Wideband RF Power LDMOS Transistors

Documentation

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ARCHIVED - MRF6V2300NR1, MRF6V2300NBR1, 10-600 MHz, 300 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs

Industrial, Scientific and Medical Solutions Brochure

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