MRF6VP41KH|1000 W Pulse,10-500 MHz, 50 V | NXP Semiconductors

10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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Product Details

Features

  • Typical Pulse Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%
    Power Gain: 20 dB
    Drain Efficiency: 64%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • CW Operation Capability with Adequate Cooling
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel

  • NOTE: PARTS ARE PUSH–PULL

N true 0 PSPMRF6VP41KHen 2 Brochure Brochure t518 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 6 English Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. 1200513315097691737912 PSP 1.3 MB None None documents None 1200513315097691737912 /docs/en/data-sheet/MRF6VP41KH.pdf 1319356 /docs/en/data-sheet/MRF6VP41KH.pdf MRF6VP41KH documents N N 2016-10-31 ARCHIVED - MRF6VP41KHR6, MRF6VP41KHSR6 10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MRF6VP41KH.pdf /docs/en/data-sheet/MRF6VP41KH.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Apr 5, 2012 980000996212993340 Data Sheet Y N ARCHIVED - MRF6VP41KHR6, MRF6VP41KHSR6 10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs Brochure Brochure 1 2 9 English Technology to enhance performance, reliability and ease of use in industrial RF systems for high power ISM applications in the 1.8 to 2450 MHz bandwidth. 1149912055524715966966 PSP 1.3 MB None None documents None 1149912055524715966966 /docs/en/brochure/BR1593.pdf 1305373 /docs/en/brochure/BR1593.pdf BR1593 documents N N 2016-10-31 Industrial, Scientific and Medical Solutions Brochure /docs/en/brochure/BR1593.pdf /docs/en/brochure/BR1593.pdf Brochure N 712453003803778552 2022-12-07 pdf N en Oct 3, 2014 712453003803778552 Brochure Y N Industrial, Scientific and Medical Solutions Brochure false 0 MRF6VP41KH downloads en true 1 Y PSP Brochure 1 /docs/en/brochure/BR1593.pdf 2016-10-31 1149912055524715966966 PSP 2 Oct 3, 2014 Brochure Technology to enhance performance, reliability and ease of use in industrial RF systems for high power ISM applications in the 1.8 to 2450 MHz bandwidth. None /docs/en/brochure/BR1593.pdf English documents 1305373 None 712453003803778552 2022-12-07 N /docs/en/brochure/BR1593.pdf Industrial, Scientific and Medical Solutions Brochure /docs/en/brochure/BR1593.pdf documents 712453003803778552 Brochure N en None Y pdf 9 N N Industrial, Scientific and Medical Solutions Brochure 1.3 MB BR1593 N 1149912055524715966966 Data Sheet 1 /docs/en/data-sheet/MRF6VP41KH.pdf 2016-10-31 1200513315097691737912 PSP 1 Apr 5, 2012 Data Sheet Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. None /docs/en/data-sheet/MRF6VP41KH.pdf English documents 1319356 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF6VP41KH.pdf ARCHIVED - MRF6VP41KHR6, MRF6VP41KHSR6 10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MRF6VP41KH.pdf documents 980000996212993340 Data Sheet N en None Y pdf 6 N N ARCHIVED - MRF6VP41KHR6, MRF6VP41KHSR6 10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 1.3 MB MRF6VP41KH N 1200513315097691737912 true Y Products

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