MMRF1306H|1.8-600 MHz, 1250 W CW 50 V | NXP Semiconductors

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1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

MMRF1306H
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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These high ruggedness devices, MMRF1306HR5 and MMRF1306HSR5, are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications. They are unmatched input and output designs allowing wide frequency utilization from 1.8 to 600 MHz.

Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.

RF Performance Tables

Typical Performance

VDD = 50 Vdc, IDQ = 100 mA
Signal Type Pout
(W)		 f
(MHz)		 Gps
(dB)		 ηD
(%)
Pulse
(100 µsec, 20% Duty Cycle)		 1250 Peak23024.074.0
CW 1250 CW23022.974.6

Application Circuits — Typical Performance

Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
27CW13002781
40CW13002685
81.36CW12502784
87.5-108CW11002480
144-148CW12502678
170-230DVBT2252530
352Pulse
(200 µsec,
20% Duty Cycle)		125021.566
352CW115020.568
500CW10001858

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pout
(W)		 Test
Voltage		 Result
230 Pulse
(100 µsec,
20% Duty Cycle)		 >65:1 at all
Phase Angles		 1500 Peak
(3 dB Overdrive)		 50 No Device
Degradation
N true 0 PSPMMRF1306Hen 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English These high ruggedness devices, MMRF1306HR5 and MMRF1306HSR5, are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications. 1387490143469723253536 PSP 487.1 KB None None documents None 1387490143469723253536 /docs/en/data-sheet/MMRF1306H.pdf 487072 /docs/en/data-sheet/MMRF1306H.pdf MMRF1306H documents N N 2016-10-31 MMRF1306HR5, MMRF1306HSR5 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/MMRF1306H.pdf /docs/en/data-sheet/MMRF1306H.pdf Data Sheet N 980000996212993340 2023-03-27 pdf N en Aug 19, 2014 980000996212993340 Data Sheet Y N MMRF1306HR5, MMRF1306HSR5 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet false 0 MMRF1306H downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/MMRF1306H.pdf 2016-10-31 1387490143469723253536 PSP 1 Aug 19, 2014 Data Sheet These high ruggedness devices, MMRF1306HR5 and MMRF1306HSR5, are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications. None /docs/en/data-sheet/MMRF1306H.pdf English documents 487072 None 980000996212993340 2023-03-27 N /docs/en/data-sheet/MMRF1306H.pdf MMRF1306HR5, MMRF1306HSR5 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/MMRF1306H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MMRF1306HR5, MMRF1306HSR5 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet 487.1 KB MMRF1306H N 1387490143469723253536 true Y Products

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