MMRF1304L|1.8-2000 MHz, 25 W, 50 V | NXP Semiconductors

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1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor

MMRF1304L
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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MMRF1304LR5 is an RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications and radar. This device is fabricated using Our enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered.

Features

  • Wide Operating Frequency Range
  • Very Rugged
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Extended ESD Protection Circuit
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13-inch Reel.

RF Performance Tables

HF, 1.8-30 MHz

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)		 IMD
(dBc)
1.8 to 30(1,3)Two-Tone
(10 kHz spacing)		25 PEP25.050.0–28

30-512 MHz Broadband

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)		 IMD
(dBc)
30-512(2,3)Two-Tone
(200 kHz spacing)		25 PEP17.332.0–32

512 MHz Narrowband

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
512(4)Pulse (100 µsec,
20% Duty Cycle)		25 Peak25.974.0
512(4)CW2526.075.0

Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
30(1)CW>65:1
at all Phase
Angles		0.11
(3 dB
Overdrive)		50No
Device
Degradation
512(2)CW0.95
(3 dB
Overdrive)
512(4)Pulse
(100 µsec,
20% Duty Cycle)		0.14 Peak
(3 dB
Overdrive)
512(4)CW0.14
(3 dB
Overdrive)
1. Measured in 1.8-30 MHz broadband reference circuit.
2. Measured in 30-512 MHz broadband reference circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.
4. Measured in 512 MHz narrowband test circuit.
N true 0 PSPMMRF1304Len 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English The MMRF1304LR5 is an RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications and radar. 1387489696433720590519 PSP 348.9 KB None None documents None 1387489696433720590519 /docs/en/data-sheet/MMRF1304L.pdf 348860 /docs/en/data-sheet/MMRF1304L.pdf MMRF1304L documents N N 2016-10-31 ARCHIVED - MMRF1304LR5 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/MMRF1304L.pdf /docs/en/data-sheet/MMRF1304L.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Dec 19, 2013 980000996212993340 Data Sheet Y N ARCHIVED - MMRF1304LR5 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor - Data Sheet false 0 MMRF1304L downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/MMRF1304L.pdf 2016-10-31 1387489696433720590519 PSP 1 Dec 19, 2013 Data Sheet The MMRF1304LR5 is an RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications and radar. None /docs/en/data-sheet/MMRF1304L.pdf English documents 348860 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MMRF1304L.pdf ARCHIVED - MMRF1304LR5 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/MMRF1304L.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - MMRF1304LR5 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor - Data Sheet 348.9 KB MMRF1304L N 1387489696433720590519 true Y Products

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