Implementing Functionally Safe xEV Power Inverter Designs with IGBT and SiC Devices | NXP Semiconductors

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Implementing Functionally Safe xEV Power Inverter Designs with IGBT and SiC Devices

Implementing Functionally Safe xEV Power Inverter Designs with IGBT and SiC Devices

About This Training

This session provides a technical deep dive of a complete traction inverter system solution (hardware, software, functional safety) engineered to help customers accelerate the development of their next-generation electric vehicles (HEV/PHEV/BEV). The inverter solution addresses the emerging transition from utilizing IGBTs to SiC MOSFETs.

The training also features a demonstration of a SiC MOSFET-based inverter reference design spinning a 3-phase PMSM motor.

Presentation

Implementing Functionally Safe xEV Power Inverter Designs with IGBT and SiC Device

What You Will Learn

Explore vehicle electrification market trends
Learn the technical specifications and key features for an xEV traction inverter system supporting ASIL D level system functional safety
Discover how NXP automotive products address the market needs for xEV inverter systems, featuring a new power inverter motor control reference design adaptable to IGBTs and SiC MOSFETs

Presented by

Vince McNeil

Director and Segment Line Manager, NXP Semiconductors
Sandeep Kumar

Systems and Applications Engineer, NXP Semiconductors

DURATION

59 min

LANGUAGE

English

SKILL LEVEL

Beginner

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Products Featured in This Training

EV Power Inverter Control Reference Platform Gen 2

EV Power Inverter Control Reference Platform Gen 2

Sample/Buy

Additional Resources

Hybrid Electric Vehicle (HEV) Applications

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