Design Files
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The NWP2081T is a high-voltage monolithic integrated circuit made using the latch‑up free Silicon‑On‑Insulator (SOI) process. The circuit is designed for driving MOSFETs in a half-bridge configuration.
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Receive the full breakdown. See the product footprint and more in the eCad file.
Receive the full breakdown. See the product footprint and more in the eCad file.