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N-channel FETs
Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service.
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Part | CAD Model | Package Type | Status | VDS [max] (V) | RDSon [max] (ohm) |
|---|---|---|---|---|---|
TO-236AB | No Longer Manufactured | 40 | 40 |
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