Silicon RF switches

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These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges.

Data Sheet

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3 documents

^{Data Sheet}
Silicon RF switches

PDFRev 3.0Nov 14, 2014174.4 KBBF1118_1118R_1118W_1118WREnglish
^{Package Information}
plastic surface-mounted package; reverse pinning; 4 leads

PDFRev 1.0Feb 8, 2016297.5 KBSOT343REnglish
^{Packing Information}
CMPAK-4; Tape reel SMD; standard product orientation 12NC ending 115

PDFRev 1.0Nov 16, 2012259.0 KBSOT343R_115English

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