Enhancement type N-channel dual gate Field-Effect Transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. Encapsulated in a plastic SOT343R package.
Part numbers include: BF1212WR.
|
|
|
|
|
|
|
|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Quick reference to our documentation types.
4 documents
3 design files
Receive the full breakdown. See the product footprint and more in the eCad file.
