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2 design files
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Models
S-parameters BFU760F
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Design Files - miscellaneous
NXP design kit: RF small signal
NPN Wideband Silicon Germanium RF Transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
sot343f_3d
Product Details
Features
- 110 GHz fT silicon germanium technology
- High maximum output third-order intercept point 32 dBm at 1.8 GHz
- Low noise high linearity RF transistor
Target Applications
- GPS
- High linearity applications
- Ka band oscillators DRO’s
- LTE, cellular, UMTS
- Medium output power applications
- SDARS first stage LNA
- Wi-Fi / WLAN / WiMAX
- ZigBee
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Documentation
Quick reference to our documentation types.
4 documents
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Data Sheet
NPN wideband silicon germanium RF transistor
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Package Information
Plastic surface-mounted flat pack package; 4 leads
4 documents
-
Data Sheet
NPN wideband silicon germanium RF transistor
-
Package Information
Plastic surface-mounted flat pack package; 4 leads