Dual-NPN Wideband Silicon RF Transistor

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Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.

The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

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Data Sheet

Product Details

Features

Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NF_min) = 0.65 dB at 900 MHz
Maximum stable gain 19 dB at 900 MHz
11 GHz f_T silicon technology

Target Applications

Applications requiring high supply voltages and high breakdown voltages
Broadband differential amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators

Part numbers include: BFU520Y.

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Documentation

Quick reference to our documentation types.

1-5 of 7 documents

^{Data Sheet}
Dual NPN wideband silicon RF transistor

PDFRev 1.0Feb 20, 2014306.3 KBBFU520YEnglish
^{User Guide}
User Manual BFU5xx series starter kits

PDFRev 1.0Jan 21, 20142.2 MBUM10772English
^Brochure
Design with confidence using our latest RF discrete

PDFRev 1.0Jan 7, 2014801.0 KB75017501English
^{Package Information}
plastic, surface-mounted package; 6 terminals; 0.65 mm pitch; 2 mm x 1.25 mm x 0.95 mm body

PDFRev 1.1Jan 9, 2017214.6 KBSOT363English
^{Packing Information}
TSSOP6; Tape reel SMD; standard product orientation 12NC ending 135

PDFRev 1.0Nov 20, 2012191.9 KBSOT363_135English
^{Supporting Information}
Reflow Soldering Profile

PDFRev 1.0Feb 17, 201434.6 KBREFLOW_SOLDERING_PROFILEEnglish
^{Supporting Information}
MAR_SOT363 Topmark

PDFRev 1.0Jun 2, 2013106.2 KBMAR_SOT363English

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Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.