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NXP design kit: RF small signal
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NPN Wideband Silicon Germanium RF Transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
sot343f_3d
Product Details
Features
- Low noise high linearity RF transistor
- 110 GHz fT silicon germanium technology
- Optimal linearity for low current and high gain
- Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz
- Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM band
and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:
- Low current: 10.8 mA
- Noise figure < 1.2 dB
- Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz
- High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz
- Very fast on/off times
- Unconditionally stable
- Higher IP3, higher gain or lower noise figure possible with different application circuits
Target Applications
- High linearity applications
- Medium output power applications
- Wi-Fi / WLAN / WiMAX
- ZigBee
Buy/Parametrics
1 result
Exclude 1 NRND
Part | Order | CAD Model | Package Type | Generation | VCEO [max] (V) | IC [max] (mA) | Ptot [max] (mW) | Polarity | @f (MHz) | @IC (mA) | @VCE (V) | NF (dB) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
DFP4 | 7th | 2.8 | 70 | 220 | NPN | 5900 | 10.8 | 2 | 1.2 |
4 documents
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