BFU590 | NXP Semiconductors

NPN Wideband Silicon RF Transistor

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Product Details

Features

  • Medium power, high linearity, high breakdown voltage RF transistor
  • AEC-Q101 qualified
  • Maximum stable gain 13 dB at 900 MHz
  • PL(1dB) 21.5 dBm at 900 MHz
  • 8.5 GHz fT silicon technology

Target Applications

  • Automotive applications
  • Broadband amplifiers
  • Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
  • Large signal amplifiers for ISM applications

Buy/Parametrics

2 results

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Order

CAD Model

Package Type

Generation

fT [typ] (MHz)

VCEO [max] (V)

IC [max] (mA)

Ptot [max] (mW)

Polarity

SC-73

5th

8500

12

200

2000

NPN

SOT89

5th

8000

12

200

2000

NPN

Documentation

Quick reference to our documentation types

9 documents

Compact List

Application Note (4)
Brochure (1)
Data Sheet (2)
Packing Information (2)

Design Resources

Design Files

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3 design files

Support

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