NPN wideband silicon RF transistor | NXP Semiconductors

NPN Wideband Silicon Germanium RF Transistor

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Product Details

Features

  • 110 GHz fT silicon germanium technology
  • High maximum power gain 18.5 dB at 5.8 GHz
  • Low noise high gain microwave transistor
  • Noise figure (NF) = 0.8 dB at 5.8 GHz

Target Applications

  • 2nd LNA stage and mixer stage in DBS LNB’s
  • AMR
  • Bluetooth
  • FM radio
  • GPS
  • Ka band oscillators DRO’s
  • Low current battery equiped applications
  • Low noise amplifiers for microwave communications systems
  • LTE, cellular, UMTS
  • Microwave driver / buffer applications
  • Mobile TV
  • RKE
  • SDARS first stage LNA
  • Wi-Fi / WLAN / WiMAX
  • ZigBee

Buy/Parametrics

1 result

Exclude 1 NRND

Order

CAD Model

Generation

fT [typ] (MHz)

VCEO [max] (V)

Ptot [max] (mW)

Polarity

@f (MHz)

@VCE (V)

@IC (mA)

NF (dB)

Status

7th

55000

2.8

197

NPN

12000

2

5

1.3

End of Life

Documentation

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1-10 of 12 documents

Compact List

Application Note (8)
Brochure (1)
Data Sheet (1)
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Design Files

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3 design files

Hardware

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3 hardware offerings

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