BFU580 | NXP Semiconductors

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NPN Wideband Silicon RF Transistor

BFU580 Active

NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.

The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

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Product Details

Features

  • Low noise, high linearity, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
  • Maximum stable gain 15.5 dB at 900 MHz
  • 11 GHz fT silicon technology

Target Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband amplifiers up to 2 GHz
  • Low noise, high linearity amplifiers for ISM applications
  • Automotive applications (e.g., antenna amplifiers)

Buy/Parametrics

2 results

Include 0 NRND

Part

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CAD Model

Package Type

Generation

fT [typ] (MHz)

VCEO [max] (V)

IC [max] (mA)

Ptot [max] (mW)

Polarity

NF (dB)

@f (MHz)

@IC (mA)

@VCE (V)

BFU580G
Data Sheet

SC-73

5th

11000

12

60

1000

NPN

0.75

900

5

8

BFU580Q
Data Sheet

SOT89

5th

10500

12

60

1000

NPN

0.75

900

5

8

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3 design files

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