Design Files
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Enhancement type N-channel dual gate Field-Effect Transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1217WR is encapsulated in a plastic SOT343R package.
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Receive the full breakdown. See the product footprint and more in the eCad file.
Receive the full breakdown. See the product footprint and more in the eCad file.