Compact Models

Compact models are mathematical descriptions (equations) of semiconductor devices used in analog circuit simulators. NXP has a simulator-independent compact transistor model library, called SiMKit. Here you can find the latest model information and downloads including full documentation as well as the complete SiMKit source code.

What’s New in 6.1

Version 6.1 of the SiMKit library is now available. On this website, previous versions can be found as well. The main developments of this release are:

  • The new version 101.1.0 of ASM-ESD device was added to SiMKit
  • An error in the overflow protection of juncap200 was corrected
  • An error in all Output Parameters defined via ddx was fixed in PSP104
  • Device name was added as instance parameter in all devices that implement SOA and it is used in all SOACHECK_INFO messages
  • Better description of functionality of the VBALLMSG parameter in SOA
  • The $simparam mechanism was added to the SiMKit interface, so far supporting the options minr and rthresh
  • The spice3_models source code was removed from the SiMKit which was only needed to create a library used by ProMOST and Pstar

Read more about SiMKit 6.1

Product Description
Advanced Diode model Our Advanced Diode model is an extension to normal diode models to include a much better description of especially the reverse behavior.
JFETIDG Independent dual-gate JFET. Refer to https://nanohub.org/publications/173/2 for more information.
Juncap The JUNCAP model describes the behavior of the diodes that are formed by the source, drain, or well-to-bulk junctions in MOST devices. In order to include the effects of differences in the sidewall, bottom, and gate-edge-junction profiles, these three contributions are calculated separately in the JUNCAP model.
Mextram The Mextram model gives a description of vertical bipolar transistors in all kinds of processes, amongst which are modern SiGe processes and robust HV processes. It is very efficient in modeling the lowly doped collector epilayer of a bipolar transistor where effects like velocity saturation, base widening, Kirk effect, and impact ionization play a role.
Model 11 MOS Model 11 (MM11) is a symmetrical, surface-potential-based model, giving an accurate physical description of the transition from weak to strong inversion.
Model 20 MOS Model 20 is an old compact LDMOS model, which combines the MOSFET operation of the channel region with that of the drift region under the thin gate oxide. As such, it was aimed as a successor of MOS model 9 in series with MOS model 31 or MOS model 11 in series with MOS model 31.
Model 31 MOS Model 31 is a physics-based transistor model to be used in circuit simulation and IC-design of analog high-voltage applications. The model describes the electrical behavior of a junction-isolated accumulation/depletion-type MOSFET.
Model 40 MOS Model 40 is a physics-based transistor model to be used in circuit simulation and IC-design of analog high-voltage applications processed in Silicon-on-Insulator (SOI).
Model 9 MOS Model 9 is a physics-based analytical model for electrical circuit simulation and design for analog applications. It provides a description of the electrical characteristics in all relevant regions of transistor operation such as the sub-threshold current, the substrate current and the output conductance.
Model PSP Until and including 2011, the PSP model has been developed jointly by NXP (formerly part of Philips) and the group of Prof. Gildenblat at Arizona State University (formerly at Penn State University). From 2011 to 2014, the model has been further developed jointly by NXP and Delft University of Technology.
Modella In the design of bipolar analog integrated circuits, greater flexibility is often achieved when both NPN and PNP transistors are incorporated in the circuit design. Many present-day bipolar production processes use the conventional lateral PNP as the standard PNP transistor structures.