
1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors
Sign in for a personalized NXP experience.
Frequency (MHz) (1) |
Signal Type | VDD (V) |
Pout (W) |
Gps (dB) |
ηD (%) |
1030 | Pulse (128 µsec, 10% Duty Cycle) | 50 | 800 Peak | 17.5 | 52.1 |
1090 | 700 Peak | 19.0 | 56.1 | ||
1030 | 52 | 850 Peak | 17.5 | 51.7 | |
1090 | 770 Peak | 19.2 | 56.1 |
Frequency (MHz) (1) |
Signal Type | VDD (V) |
Pout (W) |
Gps (dB) |
ηD (%) |
960 | Pulse (128 µsec, 4% Duty Cycle) |
50 | 747 Peak | 16.7 | 50.8 |
1030 | 713 Peak | 16.5 | 49.7 | ||
1090 | 700 Peak | 16.5 | 47.1 | ||
1215 | 704 Peak | 16.5 | 54.5 |
Frequency (MHz) |
Signal Type | VDD (V) |
Pout (W) |
Gps (dB) |
ηD (%) |
1030 (2) | Pulse (128 µsec, 10% Duty Cycle) | 50 | 730 Peak | 19.2 | 58.5 |
Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
1030 (2) | Pulse (128 µsec, 10% Duty Cycle) | > 20:1 at all Phase Angles | 17.2 Peak (3 dB Overdrive) | 50 | No Device Degradation |
1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors
1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET
4 results
Include 0 NRND
Part | Order | CAD Model | Status | Frequency (Min) (MHz) | Frequency (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Die Technology |
---|---|---|---|---|---|---|---|---|---|
Active | 960 | 1215 | 52 | 58.5 | 700 | LDMOS | |||
Active | 960 | 1215 | 52 | 58.5 | 700 | LDMOS | |||
Active | — | — | — | — | — | — | |||
Active | 960 | 1215 | 50 | 58.5 | 700 | LDMOS |
AFV10700H
Quick reference to our documentation types.
5 documents
Compact List
There are no results for this selection.
Please wait while your secure files are loading.
5 documents
Compact List
1-5of 10 design files
Please wait while your secure files are loading.
1-5of 10 design files
There are no recently viewed products to display.
View or edit your browsing historyHelp us improve your experience on our site. We invite you to take our five-question survey.