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1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor
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The MRFX1K80H is the first device based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.
Frequency (MHz) |
Signal Type | VDD (V) |
Pout (W) |
Gps (dB) |
ηD (%) |
Reference Circuit Part Number |
27 | CW | 65 | 1800 CW | 27.8 | 75.6 | MRFX1K80H-27MHZ |
64 | Pulse (100 µsec, 10% Duty Cycle) | 65 | 1800 Peak | 27.1 | 69.5 | MRFX1K80H-64MHZ |
81.36 | CW | 62 | 1800 CW | 25.1 | 78.7 | MRFX1K80H-81MHZ |
87.5-108 | CW | 60 | 1600 CW | 23.6 | 82.5 | MRFX1K80H-88MHZ |
123/128 | Pulse (100 µsec, 10% Duty Cycle) | 65 | 1800 Peak | 25.9 | 69.0 | MRFX1K80H-128MHZ |
175 | CW | 60 | 1560 CW | 23.5 | 75.9 | MRFX1K80H-175MHZ |
174-230 Doherty | DVB-T (8k OFDM) | 63 | 250 Avg. | 21.3 | 43.3 | MRFX1K80H-VHFDHY |
230 | Pulse (100 µsec, 20% Duty Cycle) | 65 | 1800 Peak | 25.1 | 75.1 | MRFX1K80H-230MHZ |
Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage | Result |
230 | Pulse (100 µsec, 20% Duty Cycle) |
> 65:1 at all Phase Angles | 14 W Peak (3 dB Overdrive) |
65 | No Device Degradation |
8 results
Include 1 NRND
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